IR5311C-Fornitore globale

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No. 42, Makeng Branch Road, Nanping City, Fujian Province (postcode: 353000)

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IR5311C

1、 Overview: IR5311C is a GaAlAs infrared emitting diode, characterized by high emission intensity, high reliability, emission angle of 45 °, and diam

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1、 Overview:
IR5311CIt is a GaAlAs infrared emitting diode, characterized by
It has high emission intensity, high reliability, emission angle of 45 °, and diameter
5mm. Widely used in instruments, meters, and electrical equipment near infrared
Optical data transmission and emission, photoelectric switch, photoelectric conversion, television
Infrared remote control signal transmission for household appliances such as air conditioners and video recorders.

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IIMain technical parameters

limit parameter （Ta=25℃）

join number	symbol	price	unit	notes
Dissipated power	PD	100	mW
forward current	IF	50	mA
Pulse current (pulse width)=100usDuty cycle=1％）	IFP	1	A
Reverse voltage	VR	5	V
operation temperature	Topr	-20∽85	℃
storage temperature	Tstg	-30∽85	℃
welding temperature	Tsol	260	℃	(From the root of the pin)4mmThe longest welding time5s）

Photoelectric characteristics（Ta=25℃）

parameter	symbol	Test conditions	minimum	typical	maximum	unit
intensity	Ee	IF=20	7.8	10	mA	-
		mW/srIF	=100	45	mA,tp=100 us,tp/T=0.01
		--I	F	450	=1
A,tp=100 us,tp/T=0.01	--	peak wavelengthλP	I	940	F	=20
mA	-	-nmbandwidth	△λ	45	I	F
=20	mA-	-nmforward voltage	V	1.2	1.5	F
		IF=20	mA	1.4	1.85
		-VI	F	2.6	4.0
=100	mA,tp=100 us,tp/T=0.01-	IF=1	A,tp=100 us,tp/T=0.01	-	10	reverse current
I	2RV	R=5V-	-	45	uA	emission angle
θ		1/2IF	=20	15	mA	-

deg

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